Diotec Semiconductor Single FETs, MOSFETs DI049N06PTK

N-Channel Power MOSFET with 65 V drain-source breakdown voltage, 49 A continuous drain current at 25°C, and a maximum on-state resistance of 6.1 mΩ at 10 V gate-source voltage. Housed in a QFN3x3 package with a low profile, it supports a maximum junction temperature of 150°C and features an ESD-protected gate. It includes AEC-Q101 compliance for the -Q suffix variant, complies with RoHS, REACH, and Conflict Minerals requirements, and has a UL 94 V-0 rated case material. Thermal resistance from junction to case is less than 5 K/W, and junction to ambient is less than 50 K/W. The device is designed for power management, battery-powered devices, and load switching applications.