Diotec Semiconductor Single FETs, MOSFETs DI045N04PT

N-Channel power MOSFET in a QFN3x3 package with a 45 V drain-source voltage rating and 45 A continuous drain current at 60°C. The device features a maximum on-state resistance of 8.5 mΩ at 10 V gate drive and 16 mΩ at 4.5 V gate drive, a peak drain current of 160 A, and an avalanche energy rating of 36 mJ. It has a maximum junction temperature of 150°C and a power dissipation of 41.7 W. The package is low profile, compatible with logic-level gate drive, and meets RoHS, REACH, and conflict mineral requirements. AEC-Q101 compliance is available as an option. Thermal resistance from junction to case is less than 3 K/W, and from junction to ambient is less than 50 K/W when mounted on a 645 mm² copper pad. Weight is approximately 0.1 g and it is supplied taped on a 13" reel with 5000 units per reel.