Diotec Semiconductor FET, MOSFET Arrays DI028N10PQ2-AQ

Dual N-channel power MOSFET in a QFN5x6 package, rated for 100 V drain-source voltage and 28 A continuous drain current at 25°C, with a maximum on-state resistance of 21 mΩ and power dissipation of 32.7 W. The device features avalanche capability, low gate charge, and fast switching times. It is AEC-Q101 qualified, complies with RoHS, and has an operating junction temperature range of -55°C to +175°C. The thermal resistance from junction to case is less than 3.8 K/W, and the package is designed for surface-mount assembly with a low-profile, space-saving form factor.