Diotec Semiconductor Single FETs, MOSFETs DI018N65D1

N-channel power MOSFET for commercial and industrial applications with a drain-source voltage rating of 650 V, continuous drain current of 18 A at 25°C, and on-state resistance of up to 190 mΩ. Housed in a TO-252AA (D-PAK) package, it supports a maximum junction temperature of 175°C and dissipates 142 W at 25°C. The device is avalanche-rated with a single-pulse energy of 64 mJ and features fast switching times. It complies with RoHS, AEC-Q101 (when suffix -Q is present), and UL 94 V-0 standards. Thermal resistance from junction to case is 1.05 K/W. Taped and reeled packaging for automated assembly is provided.