The 2N7002A-AQ is an N-channel enhancement mode MOSFET designed for signal processing, driver stages, and logic level conversion. It is packaged in SOT-23 (TO-236) with a weight of approximately 0.01 g and complies with RoHS and UL 94 V-0 standards. The device is in AEC-Q101 qualification, operates with a maximum drain-source voltage of 60 V, continuous drain current of 115 mA, and power dissipation of 225 mW, with a maximum junction temperature of 150°C. It features a typical on-state resistance of 5 Ω at V_GS = 10 V and I_D = 500 mA, and a gate-source threshold voltage range of 1 V to 2.5 V. Taped and reeled packaging is available in 3000-unit reels. Thermal resistance junction-to-ambient is 556 K/W.
MOSFET N-CH 60V 280MA SOT23-3
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 4878-2N7002A-AQ-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |