Diotec Electronics Corporation Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single BC327-40BK

Description
Win Source Part Number: 1022931-BC327-40BK Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Box Standard Package: 5,000 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 800 mA Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92 Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 85 pct. MSL Level: Not Applicable HTSUS: 8541.21.0000 Mfr: Diotec Semiconductor Other Names: 2796-BC327-40BK
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Description
Win Source Part Number: 1022931-BC327-40BK Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Box Standard Package: 5,000 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 800 mA Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92 Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 85 pct. MSL Level: Not Applicable HTSUS: 8541.21.0000 Mfr: Diotec Semiconductor Other Names: 2796-BC327-40BK
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Datasheet
Datasheet Summary
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BC327-40BK is a PNP silicon epitaxial planar transistor for general-purpose use, housed in a TO-92 package measuring 4.6±0.1 mm in height with a weight of approximately 0.18 g. It has a collector-emitter breakdown voltage of 50 V, a continuous collector current rating of 800 mA, and a power dissipation of 625 mW. The DC current gain (hFE) is guaranteed minimum 250 at 100 mA collector current and 1 V collector-emitter voltage, with a transition frequency of 100 MHz. The transistor meets UL 94 V-0 flammability standard, operates from -55°C to 150°C junction temperature, and is classified as AEC-Q101 qualified. Thermal resistance from junction to ambient air is less than 200 K/W.

Datasheet Summary
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BC327-40BK is a PNP silicon epitaxial planar transistor for general-purpose use, housed in a TO-92 package measuring 4.6±0.1 mm in height with a weight of approximately 0.18 g. It has a collector-emitter breakdown voltage of 50 V, a continuous collector current rating of 800 mA, and a power dissipation of 625 mW. The DC current gain (hFE) is guaranteed minimum 250 at 100 mA collector current and 1 V collector-emitter voltage, with a transition frequency of 100 MHz. The transistor meets UL 94 V-0 flammability standard, operates from -55°C to 150°C junction temperature, and is classified as AEC-Q101 qualified. Thermal resistance from junction to ambient air is less than 200 K/W.

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1022931-BC327-40BK - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1022931-BC327-40BK
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1022931-BC327-40BK
Win Source Part Number: 1022931-BC327-40BK Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Box Standard Package: 5,000 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 800 mA Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92 Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 85 pct. MSL Level: Not Applicable HTSUS: 8541.21.0000 Mfr: Diotec Semiconductor Other Names: 2796-BC327-40BK

Win Source Part Number: 1022931-BC327-40BK
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Box
Standard Package: 5,000
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 800 mA
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 85 pct.
MSL Level: Not Applicable
HTSUS: 8541.21.0000
Mfr: Diotec Semiconductor
Other Names: 2796-BC327-40BK

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 1022931-BC327-40BK
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
Polarity PNP
Package Type TO-92; SOT3
IC(max) 800 milliamps
Power Gain 250 dB
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