DIODES Incorporated Bipolar Transistor Arrays ZXTD1M832TA

Bipolar (BJT) Transistor Array 2 PNP (Dual) 12V 4A 110MHz 1.7W Surface Mount 8-MLP (3x2)

Manufacturer: Diodes Incorporated
Win Source Part Number: 004880-ZXTD1M832TA
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 110MHz
Transistor Polarity: 2 PNP (Dual)
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MLP (3x2)
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Max Vce (sat): 300mV @ 150mA, 4A
Collector Cut-off Current(Max): 25nA
Typical Gain (hFE) (Min): 180 @ 2.5A, 2V
Maximum Power Dissipation: 1.7W
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

TRANS 2PNP 12V 4A 8MLP Product overview: ZXTD1M832TA from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4A. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 4A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-ZXTD1M832TA can be used for catalog matching and distributor lookup.