DIODES Incorporated 60V 11.8A TO252 MOSFET Transistor ZXMN6A09KQTC

MOSFET N-CH 60V 11.8A TO252 Product overview: ZXMN6A09KQTC from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 11.8A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 11.8A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN6A09KQTC can be used for catalog matching and distributor lookup.

N-Channel 60V 11.8A (Ta) 10.1W (Ta) Surface Mount TO-252, (D-Pak)

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120402-ZXMN6A09KQTC
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 10.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 11.8A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1426pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 40 mOhm @ 7.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient