DIODES Incorporated 60V 4.3A MOSFET Transistor ZXMN6A09DN8TC

MOSFET 2N-CH 60V 4.3A 8SO Product overview: ZXMN6A09DN8TC from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 4.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 4.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMN6A09DN8TC can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Dual) 60V 4.3A 1.25W Surface Mount 8-SO

Manufacturer: Diodes Incorporated
Win Source Part Number: 1283465-ZXMN6A09DN8TC
Packaging: Tape and Reel
Mounting Style: SMD
FET Feature: Logic Level Gate
Transistor Polarity: 2 N-Channel (Dual)
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SOP
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.diodes.com/
Manufacturer Package: 8-SOIC
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Maximum Power: 1.25W
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 4.3A
Rds On (Maximum) at Id, Vgs: 40mOhm at 8.2A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 24.2nC at 5V
Input Capacitance (Ciss) (Maximum) at Vds: 1407pF at 40V