DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A08E6QTA ZXMN6A08E6QTA

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1120401-ZXMN6A08E6QT A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-26 Dimension: SOT-23-6 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 2.8A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 5.8nC @ 10V Max Input Capacitance: 459pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 80 mOhm @ 4.8A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A08E6QTA - 1120401-ZXMN6A08E6QTA - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - ZXMN6A08E6QTA - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - ZXMN6A08E6QTADICT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - ZXMN6A08E6QTADIDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - ZXMN6A08E6QTADITR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMN6A08E6QTA - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 60V, 3.5A, Sot-26 Rohs Compliant Diodes Inc. - 29AK9175 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1120401-ZXMN6A08E6QT A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-26 Dimension: SOT-23-6 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 2.8A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 5.8nC @ 10V Max Input Capacitance: 459pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 80 mOhm @ 4.8A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A08E6QTA - 1120401-ZXMN6A08E6QTA - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A08E6QTA
1120401-ZXMN6A08E6QTA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A08E6QTA 1120401-ZXMN6A08E6QTA
Manufacturer: Diodes Incorporated Win Source Part Number: 1120401-ZXMN6A08E6QT A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-26 Dimension: SOT-23-6 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 2.8A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 5.8nC @ 10V Max Input Capacitance: 459pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 80 mOhm @ 4.8A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120401-ZXMN6A08E6QTA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-26
Dimension: SOT-23-6
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.8A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 5.8nC @ 10V
Max Input Capacitance: 459pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 80 mOhm @ 4.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN6A08E6QTA - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
ZXMN6A08E6QTA
Single FETs, MOSFETs ZXMN6A08E6QTA
MOSFET N-CH 60V 2.8A SOT26

MOSFET N-CH 60V 2.8A SOT26

Supplier's Site Datasheet
Single FETs, MOSFETs - ZXMN6A08E6QTADICT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN6A08E6QTADICT-ND
Single FETs, MOSFETs ZXMN6A08E6QTADICT-ND
N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26

N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN6A08E6QTADIDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN6A08E6QTADIDKR-ND
Single FETs, MOSFETs ZXMN6A08E6QTADIDKR-ND
N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26

N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN6A08E6QTADITR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN6A08E6QTADITR-ND
Single FETs, MOSFETs ZXMN6A08E6QTADITR-ND
N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26

N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMN6A08E6QTA - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMN6A08E6QTA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMN6A08E6QTA
MOSFET N-CH 60V 2.8A SOT26

MOSFET N-CH 60V 2.8A SOT26

Supplier's Site
Mosfet, N-Ch, 60V, 3.5A, Sot-26 Rohs Compliant Diodes Inc. - 29AK9175 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 3.5A, Sot-26 Rohs Compliant Diodes Inc.
29AK9175
Mosfet, N-Ch, 60V, 3.5A, Sot-26 Rohs Compliant Diodes Inc. 29AK9175
MOSFET, N-CH, 60V, 3.5A, SOT-26 ROHS COMPLIANT: YES

MOSFET, N-CH, 60V, 3.5A, SOT-26 ROHS COMPLIANT: YES

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
ZXMN6A08E6QTA
MOSFET ZXMN6A08E6QTA
MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm

MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1120401-ZXMN6A08E6QTA ZXMN6A08E6QTA ZXMN6A08E6QTADICT-ND ZXMN6A08E6QTA 29AK9175 ZXMN6A08E6QTA
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A08E6QTA Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 60V, 3.5A, Sot-26 Rohs Compliant Diodes Inc. MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts 60 volts
PD 1100 milliwatts 1100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; SOT26; SOT-26 SOT23; SOT26; SOT-23-6 SOT23; SOT26; SOT-23-6 Surface Mount TO-3; SOT26
Unlock Full Specs
to access all available technical data