MOSFET N-CH 60V 2.8A SOT26
N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26
N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26
N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26
Manufacturer: Diodes Incorporated
Win Source Part Number: 1120401-ZXMN6A08E6QT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-26
Dimension: SOT-23-6
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.8A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 5.8nC @ 10V
Max Input Capacitance: 459pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 80 mOhm @ 4.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm
MOSFET, N-CH, 60V, 3.5A, SOT-26 ROHS COMPLIANT: YES
MOSFET N-CH 60V 2.8A SOT26
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | ZXMN6A08E6QTA | ZXMN6A08E6QTADICT-ND | 1120401-ZXMN6A08E6QTA | ZXMN6A08E6QTA | 29AK9175 | ZXMN6A08E6QTA |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A08E6QTA | MOSFET | Mosfet, N-Ch, 60V, 3.5A, Sot-26 Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 60 volts | 60 volts | ||||
| IDSS | 2800 milliamps | |||||
| PD | 1100 milliwatts | 1100 milliwatts |
