DIODES Incorporated Single FETs, MOSFETs ZXMN6A08E6QTA

Description
MOSFET N-CH 60V 2.8A SOT26
  • Single FETs, MOSFETs - ZXMN6A08E6QTA - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A08E6QTA - 1120401-ZXMN6A08E6QTA - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - ZXMN6A08E6QTADICT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - ZXMN6A08E6QTADIDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - ZXMN6A08E6QTADITR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMN6A08E6QTA - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 60V, 3.5A, Sot-26 Rohs Compliant Diodes Inc. - 29AK9175 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
MOSFET N-CH 60V 2.8A SOT26
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - ZXMN6A08E6QTA - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
ZXMN6A08E6QTA
Single FETs, MOSFETs ZXMN6A08E6QTA
MOSFET N-CH 60V 2.8A SOT26

MOSFET N-CH 60V 2.8A SOT26

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A08E6QTA - 1120401-ZXMN6A08E6QTA - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A08E6QTA
1120401-ZXMN6A08E6QTA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A08E6QTA 1120401-ZXMN6A08E6QTA
Manufacturer: Diodes Incorporated Win Source Part Number: 1120401-ZXMN6A08E6QT A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-26 Dimension: SOT-23-6 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 2.8A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 5.8nC @ 10V Max Input Capacitance: 459pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 80 mOhm @ 4.8A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120401-ZXMN6A08E6QTA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-26
Dimension: SOT-23-6
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.8A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 5.8nC @ 10V
Max Input Capacitance: 459pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 80 mOhm @ 4.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN6A08E6QTADICT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN6A08E6QTADICT-ND
Single FETs, MOSFETs ZXMN6A08E6QTADICT-ND
N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26

N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN6A08E6QTADIDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN6A08E6QTADIDKR-ND
Single FETs, MOSFETs ZXMN6A08E6QTADIDKR-ND
N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26

N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN6A08E6QTADITR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN6A08E6QTADITR-ND
Single FETs, MOSFETs ZXMN6A08E6QTADITR-ND
N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26

N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
ZXMN6A08E6QTA
MOSFET ZXMN6A08E6QTA
MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm

MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMN6A08E6QTA - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMN6A08E6QTA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMN6A08E6QTA
MOSFET N-CH 60V 2.8A SOT26

MOSFET N-CH 60V 2.8A SOT26

Supplier's Site
Mosfet, N-Ch, 60V, 3.5A, Sot-26 Rohs Compliant Diodes Inc. - 29AK9175 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 3.5A, Sot-26 Rohs Compliant Diodes Inc.
29AK9175
Mosfet, N-Ch, 60V, 3.5A, Sot-26 Rohs Compliant Diodes Inc. 29AK9175
MOSFET, N-CH, 60V, 3.5A, SOT-26 ROHS COMPLIANT: YES

MOSFET, N-CH, 60V, 3.5A, SOT-26 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number ZXMN6A08E6QTA 1120401-ZXMN6A08E6QTA ZXMN6A08E6QTADICT-ND ZXMN6A08E6QTA ZXMN6A08E6QTA 29AK9175
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A08E6QTA Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 60V, 3.5A, Sot-26 Rohs Compliant Diodes Inc.
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
IDSS 2800 milliamps
PD 1100 milliwatts 1100 milliwatts
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