DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3F30FHTA ZXMN3F30FHTA

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 036970-ZXMN3F30FHTA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 950mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.8A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 7.7nC @ 10V Max Input Capacitance: 318pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 47 mOhm @ 3.2A, 10V Alternative Parts (Cross-Reference): FDN359AN; TSM2306CX RF; TSM2306CX RFG; Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 036970-ZXMN3F30FHTA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 950mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.8A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 7.7nC @ 10V Max Input Capacitance: 318pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 47 mOhm @ 3.2A, 10V Alternative Parts (Cross-Reference): FDN359AN; TSM2306CX RF; TSM2306CX RFG; Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3F30FHTA - 036970-ZXMN3F30FHTA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3F30FHTA
036970-ZXMN3F30FHTA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3F30FHTA 036970-ZXMN3F30FHTA
Manufacturer: Diodes Incorporated Win Source Part Number: 036970-ZXMN3F30FHTA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 950mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.8A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 7.7nC @ 10V Max Input Capacitance: 318pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 47 mOhm @ 3.2A, 10V Alternative Parts (Cross-Reference): FDN359AN; TSM2306CX RF; TSM2306CX RFG; Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 036970-ZXMN3F30FHTA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 950mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.8A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 7.7nC @ 10V
Max Input Capacitance: 318pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 47 mOhm @ 3.2A, 10V
Alternative Parts (Cross-Reference): FDN359AN; TSM2306CX RF; TSM2306CX RFG;
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN3F30FHTA - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
ZXMN3F30FHTA
Single FETs, MOSFETs ZXMN3F30FHTA
MOSFET N-CH 30V 3.8A SOT23-3

MOSFET N-CH 30V 3.8A SOT23-3

Supplier's Site Datasheet
Single FETs, MOSFETs - ZXMN3F30FHDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN3F30FHDKR-ND
Single FETs, MOSFETs ZXMN3F30FHDKR-ND
N-Channel 30V 3.8A (Ta) 950mW (Ta) Surface Mount SOT-23-3

N-Channel 30V 3.8A (Ta) 950mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN3F30FHCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN3F30FHCT-ND
Single FETs, MOSFETs ZXMN3F30FHCT-ND
N-Channel 30V 3.8A (Ta) 950mW (Ta) Surface Mount SOT-23-3

N-Channel 30V 3.8A (Ta) 950mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN3F30FHTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN3F30FHTR-ND
Single FETs, MOSFETs ZXMN3F30FHTR-ND
N-Channel 30V 3.8A (Ta) 950mW (Ta) Surface Mount SOT-23-3

N-Channel 30V 3.8A (Ta) 950mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 30V N-Channel Enhance. Mode MOSFET

MOSFET 30V N-Channel Enhance. Mode MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMN3F30FHTA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMN3F30FHTA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMN3F30FHTA
MOSFET N-CH 30V 3.8A SOT23-3

MOSFET N-CH 30V 3.8A SOT23-3

Supplier's Site
Mosfet, N Channel, 30V, 4.6A, Sot-23; Channel Type Diodes Inc. - 08N2757 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 30V, 4.6A, Sot-23; Channel Type Diodes Inc.
08N2757
Mosfet, N Channel, 30V, 4.6A, Sot-23; Channel Type Diodes Inc. 08N2757
MOSFET, N CHANNEL, 30V, 4.6A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

MOSFET, N CHANNEL, 30V, 4.6A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 036970-ZXMN3F30FHTA ZXMN3F30FHTA ZXMN3F30FHDKR-ND ZXMN3F30FHTA ZXMN3F30FHTA 08N2757
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3F30FHTA Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 30V, 4.6A, Sot-23; Channel Type Diodes Inc.
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 950 milliwatts 950 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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5 suppliers