DIODES Incorporated Single FETs, MOSFETs ZXMN2A02N8TA

N-Channel 20V 8.3A (Ta) 1.56W (Ta) Surface Mount 8-SO

Manufacturer: Diodes Incorporated
Win Source Part Number: 036955-ZXMN2A02N8TA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.56W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 8.3A (Ta)
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 18.9nC @ 4.5V
Max Input Capacitance: 1900pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 20 mOhm @ 11A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

MOSFET N-CH 20V 8.3A 8SO Product overview: ZXMN2A02N8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 8.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 8.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN2A02N8TA can be used for catalog matching and distributor lookup.