Manufacturer: Diodes Incorporated
Win Source Part Number: 044171-ZXMN20B28KTC
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 1.5A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 8.1nC @ 5V
Max Input Capacitance: 358pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 750 mOhm @ 2.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
MOSFET N-CH 200V 1.5A TO252-3
N-Channel 200V 1.5A (Ta) 2.2W (Ta) Surface Mount TO-252-3
N-Channel 200V 1.5A (Ta) 2.2W (Ta) Surface Mount TO-252-3
N-Channel 200V 1.5A (Ta) 2.2W (Ta) Surface Mount TO-252-3
MOSFET, N-CH, 200V, 1.5A, TO-252 ROHS COMPLIANT: YES
200V 1.5A 2.2W 750mΩ@2.75A,10V 2.5V@250uA null TO-252 MOSFETs ROHS
MOSFET N-CH 200V 1.5A TO252-3
MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 044171-ZXMN20B28KTC | ZXMN20B28KTC | ZXMN20B28KTCDKR-ND | 29AK9167 | ZXMN20B28KTC | ZXMN20B28KTC | ZXMN20B28KTC |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN20B28KTC | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 200V, 1.5A, To-252 Rohs Compliant Diodes Inc. | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | ||||
| PD | 2200 milliwatts | 2200 milliwatts | 2200 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; TO-252 (DPAK); TO-252-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-3 | TO-252 (DPAK) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |