DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMHC3A01T8TA ZXMHC3A01T8TA

Manufacturer: Diodes Incorporated
Win Source Part Number: 036940-ZXMHC3A01T8TA
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SM8
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.7A, 2A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 3.9nC @ 10V
Max Input Capacitance: 190pF @ 25V
Maximum Rds On at Id,Vgs: 120 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 2.7A, 2A 1.3W Surface Mount SM8

Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 2.7A, 2A 1.3W Surface Mount SM8

Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 2.7A, 2A 1.3W Surface Mount SM8

MOSFET 2N/2P-CH 30V 2.7A/2A SM8 Product overview: ZXMHC3A01T8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.7A, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.7A, 2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMHC3A01T8TA can be used for catalog matching and distributor lookup.