Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 2.17A, 1.64A 870mW Surface Mount 8-SO
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 2.17A, 1.64A 870mW Surface Mount 8-SO
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 2.17A, 1.64A 870mW Surface Mount 8-SO
Manufacturer: Diodes Incorporated
Win Source Part Number: 036939-ZXMHC3A01N8TC
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Logic Level Gate
Family Name: ZXMHC3A01N8
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 870mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.17A, 1.64A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 3.9nC @ 10V
Max Input Capacitance: 190pF @ 25V
Maximum Rds On at Id,Vgs: 125 mOhm @ 2.5A, 10V
Alternative Parts (Cross-Reference): RJM0306JSP-00-J0; ZXMHC3A01N8;
Introduction Date: May 04, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
MOSFET 2N/2P-CH 30V 2.17A 8SO Product overview: ZXMHC3A01N8TC from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.17A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMHC3A01N8TC can be used for catalog matching and distributor lookup.
MOSFET Mosfet H-Bridge 30/-30V 2.7/-2.1A
MOSFET 2N/2P-CH 30V 8-SOIC
MOSFET, P/N-CH, 30V, 2.17A ROHS COMPLIANT: YES
MOSFET 2N/2P-CH 30V 2.17A 8SO
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | ZXMHC3A01N8DITR-ND | 036939-ZXMHC3A01N8TC | 289-ZXMHC3A01N8TC | ZXMHC3A01N8TC | ZXMHC3A01N8TC | 29AK9152 | ZXMHC3A01N8TC |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMHC3A01N8TC | 30V 2.17A MOSFET Transistor | MOSFET | FET, MOSFET Arrays | Mosfet, P/n-Ch, 30V, 2.17A Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SOP | Tape & Reel (TR) | 8-SOIC (0.154", 3.90mm Width) | TO-3 | ||
| Polarity | P-Channel | N-Channel; P-Channel | P-Channel; 2 N and 2 P-Channel (Full Bridge) | ||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| PD | 870 milliwatts | 10.9 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
