DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMHC10A07T8TA ZXMHC10A07T8TA

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 036938-ZXMHC10A07T8T A Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SM8 Maximum Power Dissipation: 1.3W Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1A, 800mA Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 2.9nC @ 10V Max Input Capacitance: 138pF @ 60V Maximum Rds On at Id,Vgs: 700 mOhm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 036938-ZXMHC10A07T8T A Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SM8 Maximum Power Dissipation: 1.3W Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1A, 800mA Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 2.9nC @ 10V Max Input Capacitance: 138pF @ 60V Maximum Rds On at Id,Vgs: 700 mOhm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMHC10A07T8TA - 036938-ZXMHC10A07T8TA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMHC10A07T8TA
036938-ZXMHC10A07T8TA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMHC10A07T8TA 036938-ZXMHC10A07T8TA
Manufacturer: Diodes Incorporated Win Source Part Number: 036938-ZXMHC10A07T8T A Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SM8 Maximum Power Dissipation: 1.3W Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1A, 800mA Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 2.9nC @ 10V Max Input Capacitance: 138pF @ 60V Maximum Rds On at Id,Vgs: 700 mOhm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 036938-ZXMHC10A07T8TA
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SM8
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1A, 800mA
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 2.9nC @ 10V
Max Input Capacitance: 138pF @ 60V
Maximum Rds On at Id,Vgs: 700 mOhm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
FET, MOSFET Arrays - ZXMHC10A07T8TA - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
ZXMHC10A07T8TA
FET, MOSFET Arrays ZXMHC10A07T8TA
MOSFET 2N/2P-CH 100V 1A/0.8A SM8

MOSFET 2N/2P-CH 100V 1A/0.8A SM8

Supplier's Site Datasheet
FET, MOSFET Arrays - 31-ZXMHC10A07T8TATR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-ZXMHC10A07T8TATR-ND
FET, MOSFET Arrays 31-ZXMHC10A07T8TATR-ND
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V 1A, 800mA 1.3W Surface Mount SM8

Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V 1A, 800mA 1.3W Surface Mount SM8

Buy Now Datasheet
FET, MOSFET Arrays - 31-ZXMHC10A07T8TACT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-ZXMHC10A07T8TACT-ND
FET, MOSFET Arrays 31-ZXMHC10A07T8TACT-ND
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V 1A, 800mA 1.3W Surface Mount SM8

Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V 1A, 800mA 1.3W Surface Mount SM8

Buy Now Datasheet
FET, MOSFET Arrays - 31-ZXMHC10A07T8TADKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-ZXMHC10A07T8TADKR-ND
FET, MOSFET Arrays 31-ZXMHC10A07T8TADKR-ND
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V 1A, 800mA 1.3W Surface Mount SM8

Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V 1A, 800mA 1.3W Surface Mount SM8

Buy Now Datasheet
Singapore
100V 1A 0.8A MOSFET Transistor
289-ZXMHC10A07T8TA
100V 1A 0.8A MOSFET Transistor 289-ZXMHC10A07T8TA
MOSFET 2N/2P-CH 100V 1A/0.8A SM8 Product overview: ZXMHC10A07T8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1A, 0.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1A, 0.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMHC10A07T8TA can be used for catalog matching and distributor lookup.

MOSFET 2N/2P-CH 100V 1A/0.8A SM8 Product overview: ZXMHC10A07T8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1A, 0.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1A, 0.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMHC10A07T8TA can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMHC10A07T8TA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMHC10A07T8TA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMHC10A07T8TA
MOSFET 2N/2P-CH 100V 1A/0.8A SM8

MOSFET 2N/2P-CH 100V 1A/0.8A SM8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V 1.4A N-Channel MOSFET H-Bridge

MOSFET 100V 1.4A N-Channel MOSFET H-Bridge

Buy Now Datasheet
Mosfet, Dual, N/p-Ch, 100V, 1A Rohs Compliant Diodes Inc. - 29AK9151 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual, N/p-Ch, 100V, 1A Rohs Compliant Diodes Inc.
29AK9151
Mosfet, Dual, N/p-Ch, 100V, 1A Rohs Compliant Diodes Inc. 29AK9151
MOSFET, DUAL, N/P-CH, 100V, 1A ROHS COMPLIANT: YES

MOSFET, DUAL, N/P-CH, 100V, 1A ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 036938-ZXMHC10A07T8TA ZXMHC10A07T8TA 31-ZXMHC10A07T8TATR-ND 289-ZXMHC10A07T8TA ZXMHC10A07T8TA ZXMHC10A07T8TA 29AK9151
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMHC10A07T8TA FET, MOSFET Arrays FET, MOSFET Arrays 100V 1A 0.8A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, Dual, N/p-Ch, 100V, 1A Rohs Compliant Diodes Inc.
Polarity P-Channel P-Channel; 2 N and 2 P-Channel (Full Bridge) N-Channel; P-Channel
V(BR)DSS 100 volts 100 volts 100 volts
PD 1300 milliwatts 1.3 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SM8 SOT223; SOT-223-8 SOT223; SOT-223-8 Tape & Reel (TR) TO-3
Unlock Full Specs
to access all available technical data

Similar Products

Discrete Semiconductor Products - Transistors - IGBTs - AIKW75N60CTE8188XKSA1 - Acme Chip Technology Co., Limited
Specs
Package Type Automotive
Packing Method Tube; Tube
Output Power 428 watts
View Details
Interfet -  - Micross Components, Inc.
Micross Components, Inc.
View Details