Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V 1A, 800mA 1.3W Surface Mount SM8
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V 1A, 800mA 1.3W Surface Mount SM8
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V 1A, 800mA 1.3W Surface Mount SM8
MOSFET 2N/2P-CH 100V 1A/0.8A SM8 Product overview: ZXMHC10A07T8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1A, 0.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1A, 0.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMHC10A07T8TA can be used for catalog matching and distributor lookup.
MOSFET 2N/2P-CH 100V 1A/0.8A SM8
Manufacturer: Diodes Incorporated
Win Source Part Number: 036938-ZXMHC10A07T8T
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SM8
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1A, 800mA
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 2.9nC @ 10V
Max Input Capacitance: 138pF @ 60V
Maximum Rds On at Id,Vgs: 700 mOhm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
MOSFET 100V 1.4A N-Channel MOSFET H-Bridge
MOSFET 2N/2P-CH 100V 1A/0.8A SM8
MOSFET, DUAL, N/P-CH, 100V, 1A ROHS COMPLIANT: YES
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 31-ZXMHC10A07T8TATR-ND | 289-ZXMHC10A07T8TA | ZXMHC10A07T8TA | 036938-ZXMHC10A07T8TA | ZXMHC10A07T8TA | ZXMHC10A07T8TA | 29AK9151 |
| Product Name | FET, MOSFET Arrays | 100V 1A 0.8A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMHC10A07T8TA | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual, N/p-Ch, 100V, 1A Rohs Compliant Diodes Inc. |
| Package Type | SOT223; SOT-223-8 | Tape & Reel (TR) | SOT223; SOT-223-8 | SOT3; SM8 | TO-3 | ||
| Polarity | N-Channel; P-Channel | P-Channel; 2 N and 2 P-Channel (Full Bridge) | P-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | ||||
| Transconductance | 0.0016 to 0.0012 kS |
