DIODES Incorporated 40V 5.2A 4.7A MOSFET Transistor ZXMC4A16DN8TA

MOSFET N/P-CH 40V 5.2A/4.7A 8SO Product overview: ZXMC4A16DN8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 5.2A, 4.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 5.2A, 4.7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMC4A16DN8TA can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 036932-ZXMC4A16DN8TA
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: ZXMC4A16DN8
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.8W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 4A, 3.6A
Gate-Source Threshold Voltage: 1V @ 250mA (Min)
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 770pF @ 40V
Maximum Rds On at Id,Vgs: 50 mOhm @ 4.5A, 10V
Alternative Parts (Cross-Reference): Si4567DY-T1-E3; Si4567DY-T1-GE3; Si4567DY; ZXMC4A16DN8; SI4567DY-T1-GE3; ZXMC4A16DN8TA; Si4599DY-T1-GE3;
Introduction Date: November 09, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

MOSFET N/P-CH 40V 4A/3.6A 8SOIC

Mosfet Array N and P-Channel Complementary 40V 5.2A (Ta), 4.7A (Ta) 2.1W Surface Mount 8-SO