DIODES Incorporated FET, MOSFET Arrays ZXMC10A816N8TC

Mosfet Array N and P-Channel 100V 2A 1.8W Surface Mount 8-SO

Mosfet Array N and P-Channel 100V 2A 1.8W Surface Mount 8-SO

Mosfet Array N and P-Channel 100V 2A 1.8W Surface Mount 8-SO

MOSFET N/P-CH 100V 2A 8SO Product overview: ZXMC10A816N8TC from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMC10A816N8TC can be used for catalog matching and distributor lookup.

MOSFET N/P-CH 100V 2A 8-SOIC

Manufacturer: Diodes Incorporated
Win Source Part Number: 036928-ZXMC10A816N8TC
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: ZXMC10A816N8
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 1.8W
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 2A
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 9.2nC @ 10V
Max Input Capacitance: 497pF @ 50V
Maximum Rds On at Id,Vgs: 230 mOhm @ 1A, 10V
Alternative Parts (Cross-Reference): SP8M51TB; SP8M51GTB; ZXMC10A816N8;
Introduction Date: April 03, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited