DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - ZX3CD3S1M832TA ZX3CD3S1M832TA

Manufacturer: Diodes Incorporated
Win Source Part Number: 113910-ZX3CD3S1M832TA
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 190MHz
Transistor Polarity: PNP + Diode (Isolated)
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-MLP (3x2)
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 370mV @ 250mA, 2.5A
Collector Cut-off Current(Max): 25nA
Typical Gain (hFE) (Min): 60 @ 1.5A, 2V
Maximum Power Dissipation: 3W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Trans GP BJT PNP 40V 3A 8-Pin MLP T/R Product overview: ZX3CD3S1M832TA from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-ZX3CD3S1M832TA can be used for catalog matching and distributor lookup.