DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4306A ZVN4306A

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 057844-ZVN4306A Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 850mW (Ta) Family Name: ZVN4306A Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.1A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 330 mOhm @ 3A, 10V Alternative Parts (Cross-Reference): VN2206N3; 2SK975-E; 2SK975TZ-E; Introduction Date: September 19, 1997 ECCN: EAR99 Country of Origin: China, Germany Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 057844-ZVN4306A Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 850mW (Ta) Family Name: ZVN4306A Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.1A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 330 mOhm @ 3A, 10V Alternative Parts (Cross-Reference): VN2206N3; 2SK975-E; 2SK975TZ-E; Introduction Date: September 19, 1997 ECCN: EAR99 Country of Origin: China, Germany Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4306A - 057844-ZVN4306A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4306A
057844-ZVN4306A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4306A 057844-ZVN4306A
Manufacturer: Diodes Incorporated Win Source Part Number: 057844-ZVN4306A Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 850mW (Ta) Family Name: ZVN4306A Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.1A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 330 mOhm @ 3A, 10V Alternative Parts (Cross-Reference): VN2206N3; 2SK975-E; 2SK975TZ-E; Introduction Date: September 19, 1997 ECCN: EAR99 Country of Origin: China, Germany Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 057844-ZVN4306A
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 850mW (Ta)
Family Name: ZVN4306A
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.1A (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 330 mOhm @ 3A, 10V
Alternative Parts (Cross-Reference): VN2206N3; 2SK975-E; 2SK975TZ-E;
Introduction Date: September 19, 1997
ECCN: EAR99
Country of Origin: China, Germany
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - ZVN4306A-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZVN4306A-ND
Single FETs, MOSFETs ZVN4306A-ND
N-Channel 60V 1.1A (Ta) 850mW (Ta) Through Hole TO-92

N-Channel 60V 1.1A (Ta) 850mW (Ta) Through Hole TO-92

Buy Now Datasheet
Singapore
60V 1.1A MOSFET Transistor
278-ZVN4306A
60V 1.1A MOSFET Transistor 278-ZVN4306A
MOSFET N-CH 60V 1.1A TO92-3 Product overview: ZVN4306A from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 1.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZVN4306A can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 1.1A TO92-3 Product overview: ZVN4306A from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 1.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZVN4306A can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET
ZVN4306A
MOSFET ZVN4306A
MOSFET N-Chnl 60V

MOSFET N-Chnl 60V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZVN4306A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZVN4306A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZVN4306A
MOSFET N-CH 60V 1.1A TO92-3

MOSFET N-CH 60V 1.1A TO92-3

Supplier's Site
N Channel Mosfet, 60V, 1.1A, To-92; Channel Type Diodes Inc. - 85K9994 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 60V, 1.1A, To-92; Channel Type Diodes Inc.
85K9994
N Channel Mosfet, 60V, 1.1A, To-92; Channel Type Diodes Inc. 85K9994
N CHANNEL MOSFET, 60V, 1.1A, TO-92; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

N CHANNEL MOSFET, 60V, 1.1A, TO-92; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site
Transistor - 24685424 - Radwell International
Willingboro, NJ, United States
Transistor
24685424
Transistor 24685424
N CHANNEL MOSFET, 60V, 1.1A, TO-92; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:60V; CONTINUOUS DRAIN CURRENT ID:1.1A; ON RESISTANCE RDS(ON):0.45OHM; TRANSISTOR MOUNTING:THROUGH HOLE; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 60V, 1.1A, TO-92; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:60V; CONTINUOUS DRAIN CURRENT ID:1.1A; ON RESISTANCE RDS(ON):0.45OHM; TRANSISTOR MOUNTING:THROUGH HOLE; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Trans MOSFET N-CH 60V 1.1A 3-Pin E-Line Box - 233-ZVN4306A - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 60V 1.1A 3-Pin E-Line Box
233-ZVN4306A
Trans MOSFET N-CH 60V 1.1A 3-Pin E-Line Box 233-ZVN4306A
Trans MOSFET N-CH 60V 1.1A 3-Pin E-Line Box

Trans MOSFET N-CH 60V 1.1A 3-Pin E-Line Box

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Radwell International Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 057844-ZVN4306A ZVN4306A-ND 278-ZVN4306A ZVN4306A ZVN4306A 85K9994 24685424 233-ZVN4306A
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4306A Single FETs, MOSFETs 60V 1.1A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 60V, 1.1A, To-92; Channel Type Diodes Inc. Transistor Trans MOSFET N-CH 60V 1.1A 3-Pin E-Line Box
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 60 volts 60 volts 60 volts
PD 850 milliwatts 850 milliwatts 850 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-92; SOT3; TO-92-3 TO-92; TO-226-3, TO-92-3 (TO-226AA) Bulk TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-3; TO-92
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