DIODES Incorporated 0.15W Bipolar Transistor UMG4N-7

Description
TRANS 2NPN PREBIAS 0.15W SOT353 Product overview: UMG4N-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-UMG4N-7 can be used for catalog matching and distributor lookup.
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Description
TRANS 2NPN PREBIAS 0.15W SOT353 Product overview: UMG4N-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-UMG4N-7 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
0.15W Bipolar Transistor
293-UMG4N-7
0.15W Bipolar Transistor 293-UMG4N-7
TRANS 2NPN PREBIAS 0.15W SOT353 Product overview: UMG4N-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-UMG4N-7 can be used for catalog matching and distributor lookup.

TRANS 2NPN PREBIAS 0.15W SOT353 Product overview: UMG4N-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-UMG4N-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UMG4N-7 - 051980-UMG4N-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UMG4N-7
051980-UMG4N-7
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UMG4N-7 051980-UMG4N-7
Manufacturer: Diodes Incorporated Win Source Part Number: 051980-UMG4N-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-353 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 1mA, 10mA Typical Gain (hFE) (Min): 100 @ 1mA, 5V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 051980-UMG4N-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-353
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 1mA, 10mA
Typical Gain (hFE) (Min): 100 @ 1mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
UMG4N-7
Bipolar Transistors - Pre-Biased UMG4N-7
Bipolar Transistors - Pre-Biased 150mW 100mA

Bipolar Transistors - Pre-Biased 150mW 100mA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UMG4N-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UMG4N-7
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UMG4N-7
TRANS 2NPN PREBIAS 0.15W SOT353

TRANS 2NPN PREBIAS 0.15W SOT353

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 293-UMG4N-7 051980-UMG4N-7 UMG4N-7 UMG4N-7
Product Name 0.15W Bipolar Transistor TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UMG4N-7 Bipolar Transistors - Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; 2 NPN - Pre-Biased (Dual)
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