DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - NMSD200B01-7 NMSD200B01-7

Manufacturer: Diodes Incorporated
Win Source Part Number: 025634-NMSD200B01-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: N-Channel
Power Dissipation (Max): 200mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 200mA (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Input Capacitance: 50pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 50mA, 5V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

N-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount SOT-363

MOSFET N-CH 60V 200MA SOT363 Product overview: NMSD200B01-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 200MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 200MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NMSD200B01-7 can be used for catalog matching and distributor lookup.