DIODES Incorporated Single Bipolar Transistors FMMT411QTA

The FMMT411QTA is an NPN silicon planar bipolar transistor in SOT23 packaging, designed for low-voltage avalanche mode operation in high-speed pulse and laser diode driver applications. It supports a collector-emitter voltage of 15 V and a continuous collector current of 900 mA, with a power dissipation of 800 mW and thermal resistance of 150 °C/W. The device is AEC-Q101 qualified, RoHS compliant, and features a UL 94 V-0 rated mold compound. It exhibits fast switching with a typical current pulse of 35 A and a transition frequency of 40 MHz. Package dimensions are 3.04 mm × 2.64 mm × 1.12 mm with matte tin-plated leads.