DIODES Incorporated Single Bipolar Transistors FMMT411FDBW-7

The FMMT411FDBW is a silicon NPN bipolar transistor designed for low-voltage avalanche mode operation, suitable for high-speed pulse generation in applications such as LIDAR and radar systems. It is packaged in a W-DFN2020-3/SWP (Type A) surface-mount case measuring 2.00mm x 2.00mm with a nominal height of 0.62mm. The device supports a collector-emitter voltage of 15V and a continuous collector current of 5A, with a typical pulsed on-current of 35A under avalanche conditions. Thermal resistance is 67°C/W from junction to ambient with a 25mm x 25mm copper pad, and 12°C/W from junction to case. It operates from -55°C to +150°C and meets UL 94 V-0 flammability rating and RoHS 3 compliance. Electrostatic discharge tolerance is 4,000V for the human body model and 400V for the machine model. The package features wettable flanks with sidewall tin plating for automated optical inspection.