DIODES Incorporated Single FETs, MOSFETs DMWSH120H28SM3Q

The DMWSH120H28SM3Q is a 1200V N-channel silicon carbide power MOSFET designed for high-efficiency power-management applications such as EV DC-DC converters, charging systems, and automotive motor drivers. It is packaged in a TO247 case with approximate dimensions of 21.75mm in length and 16.25mm in width, weighing 5.6 grams. The device has a maximum on-resistance of 28.5mΩ at VGS = 15V and ID = 50A, a continuous drain current of 97.4A at TC = 25°C, and a thermal resistance from junction to case of 0.37°C/W. It is AEC-Q101 qualified, RoHS compliant, and constructed with a UL 94 V-0 rated molding compound. The operating junction temperature range is from -55°C to +175°C.