DIODES Incorporated Single FETs, MOSFETs DMWSH120H23SM4

The DMWSH120H23SM4 is a 1200V N-channel silicon carbide MOSFET in a TO247-4 package, designed for high-efficiency power applications such as EV charging, solar inverters, and UPS systems. It has a maximum continuous drain current of 100A at TC=25°C and a static drain-source on-resistance of 23mΩ at VGS=18V and ID=50A. The device features a gate-source voltage rating of -10V to +22V, with recommended operating values of -4V to +18V. Thermal resistance from junction to case is 0.43°C/W, and the operating junction temperature range is -55°C to +175°C. The package is molded plastic with UL 94 V-0 flammability rating, and the terminals are matte tin annealed over copper. The part is RoHS compliant, halogen-free, antimony-free, and qualified to AEC-Q100/101/104/200 standards.