DIODES Incorporated Single FETs, MOSFETs DMWSH120H23SM3

The DMWSH120H23SM3 is a 1200V N-channel silicon carbide MOSFET in a TO247 package, designed for high-efficiency power-management applications such as switching mode power supplies, EV charging systems, and solar inverters. It features a maximum on-resistance of 23mΩ at VGS = 18V and ID = 50A, a continuous drain current of 71A at TC = +100°C, and a thermal resistance junction-to-case of 0.43°C/W. The device is RoHS compliant, halogen- and antimony-free, and rated for operation from -55°C to +175°C. It meets AEC-Q100/101/104/200 qualifications and is manufactured in IATF 16949 certified facilities. The package uses molded plastic with UL 94 V-0 flammability rating and has a weight of approximately 6.6 grams.