DIODES Incorporated 80V 28.5A MOSFET Transistor DMTH8030LPDWQ-13

MOSFET 2N-CH 80V 28.5A POWERDI50 Product overview: DMTH8030LPDWQ-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 28.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 28.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMTH8030LPDWQ-13 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1350228-DMTH8030LPDWQ-13
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 2,500
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Power - Max: 3.1W (Ta) , 41W (Tc)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Base Product Number: DMTH8030
Current - Continuous Drain (Id) @ 25°C: 28.5A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 631pF @ 40V

MOSFET 2N-CH 80V 28.5A PWRDI50

MOSFET 2N-CH 80V 28.5A PWRDI50

MOSFET 2N-CH 80V 28.5A PWRDI50