Dual N-channel enhancement mode MOSFET in a POWERDI3333-8 package, designed for power management and load switch applications in automotive systems. The device features a 60 V drain-source voltage rating, on-resistance of 20.5 mΩ at VGS = 10 V and 27 mΩ at VGS = 4.5 V, and continuous drain current of 24.5 A at TC = 25°C. It supports 100% unclamped inductive switching testing, has an operating junction temperature range of -55°C to +175°C, and is RoHS compliant with wettable flanks for optical inspection. The package is rated UL 94 V-0 and meets J-STD-020 Level 1 moisture sensitivity. This part qualifies for AEC-Q200 and is manufactured in IATF 16949 certified facilities.
MOSFET 2N-CH 60V 9.2A PWRDI3333
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 31-DMTH6015LDVW-7TR-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | 8-PowerVDFN |
