DIODES Incorporated Single FETs, MOSFETs DMTH6009SPSW-13

The DMTH6009SPSW-13 is a 60V N-channel enhancement mode MOSFET in a PowerDI5060-8 package, designed for high-efficiency power management in applications such as DC-DC converters and synchronous rectification. It is rated for continuous drain currents up to 89.5A at +25°C case temperature and 192.1A at +175°C ambient temperature, with a maximum RDS(ON) of 10mΩ at VGS=10V and 13.5mΩ at VGS=4.5V. The device features low gate charge (29.3nC at VGS=10V), operates with a junction temperature range of -55°C to +175°C, and meets RoHS compliance and UL 94 V-0 flammability standards. It is qualified to AEC-Q100/101/104/200 and manufactured in IATF 16949 certified facilities. The package is an exposed drain pad design with a thermal resistance from junction to case of 1.1°C/W and weighs approximately 0.097 grams.