DIODES Incorporated FET, MOSFET Arrays DMTH10H038SPDWQ-13

The DMTH10H038SPDWQ-13 is a dual N-channel enhancement mode MOSFET in a PowerDI5060-8 package, rated for 100V drain-source voltage and 25A continuous drain current at TC=25°C. It features a maximum RDS(ON) of 33mΩ at VGS=10V, operates up to 175°C junction temperature, and is qualified to AEC-Q101 with PPAP capability for automotive applications. The device includes wettable flanks for optical inspection and is RoHS compliant. Package dimensions are 6.40mm x 5.15mm BSC, with a thermal resistance of 3.8°C/W junction-to-case. It is supplied in tape and reel packaging, 2500 units per carrier.