DIODES Incorporated Single FETs, MOSFETs DMT35M4LFVW-13

The DMT35M4LFVW-13 is a 30V N-channel enhancement mode MOSFET in a PowerDI3333-8 package, designed for high-efficiency power management applications. It features a low RDS(ON) of 6mΩ at VGS=10V and 9mΩ at VGS=4.5V, with continuous drain current ratings of 60A and 48A respectively at TC=25°C. The device is qualified to AEC-Q100/101/200 standards, manufactured in IATF 16949 certified facilities, and is fully RoHS compliant. It occupies 33% of the board area of an SO-8 package and supports 100% UIS testing. The package has a thermal resistance of 55°C/W when mounted on a 2oz copper PCB with a 1-inch square thermal pad. Moisture sensitivity is Level 1 per J-STD-020, and the case material meets UL 94 V-0 flammability rating. The part is supplied in 3,000/tape & reel packaging.