DIODES Incorporated Single FETs, MOSFETs DMT31M8LSS-13

The DMT31M8LSS-13 is an N-channel enhancement mode MOSFET designed for high-efficiency power-management applications such as DC-DC converters and backlighting. It is packaged in an SO-8 case with dimensions of 4.90 mm x 6.00 mm and features a thermally efficient design for high-density applications. The device has a drain-source breakdown voltage of 30 V, a maximum on-resistance of 3.2 mΩ at VGS = 10 V and 4.5 mΩ at VGS = 4.5 V, and supports continuous drain current up to 70 A at TC = 25°C. It is rated for 100% unclamped inductive switching and meets AEC-Q100/101/104/200 qualifications for automotive use. The part is lead-free, RoHS compliant, and rated for operation from -55°C to +150°C. It is supplied in tape and reel packaging, 2,500 units per reel.