DIODES Incorporated FET, MOSFET Arrays DMT10H020SDG-13

The DMT10H020SDG is a symmetric dual N-channel MOSFET in a PowerDI3333-8 package, designed for high-efficiency power-management applications. Each channel offers a drain-source voltage rating of 100 V, with on-state resistance of 23 mΩ at VGS = 10 V and 6.5 A, and 44 mΩ at VGS = 6 V and 5.1 A. The device features a continuous drain current of 6.25 A at TA = +70°C and 5.25 A at TA = +25°C, and a maximum power dissipation of 1.85 W with a thermal resistance of 67.5 °C/W when mounted on a recommended PCB layout. It meets RoHS, halogen-free, and antimony-free standards, is certified as a "Green" device with UL 94 V-0 flammability rating, and is qualified for automotive applications under AEC-Q200. The package is a molded plastic, moisture-sensitive level 1, with matte tin annealed terminals. The part is supplied in 3,000-unit tape and reel packaging.