DIODES Incorporated Single FETs, MOSFETs DMT10H009SCG-7

The DMT10H009SCG-7 is a 100V N-channel enhancement mode MOSFET in a V-DFN3333-8 package, designed for notebook battery power management and DC-DC conversion applications. It features a maximum drain-source on-resistance of 9.5mΩ at VGS = 10V and continuous drain current of 48A at TC = +25°C. The device supports 100% unclamped inductive switching (UIS) testing, has low input capacitance, fast switching speed, and is RoHS compliant. The package has a footprint of 3.30mm × 3.30mm, with a height of 0.80mm, and is supplied in 2000-unit tape and reel packaging. It meets AEC-Q100/101/200 qualifications and is manufactured in IATF 16949 certified facilities. Thermal resistance junction-to-ambient is 46°C/W with 1 inch square copper pad.