Texas Instruments CSD16322Q5 N-Channel NexFET™ Power MOSFETs CSD16322Q5

Description
N-Channel NexFET™ Power MOSFETs 8-VSON-CLIP -55 to 150
Request a Quote Datasheet
Description
N-Channel NexFET™ Power MOSFETs 8-VSON-CLIP -55 to 150
Request a Quote Datasheet

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CSD16322Q5 N-Channel NexFET™ Power MOSFETs - CSD16322Q5 - Texas Instruments
Dallas, TX, United States
CSD16322Q5 N-Channel NexFET™ Power MOSFETs
CSD16322Q5
CSD16322Q5 N-Channel NexFET™ Power MOSFETs CSD16322Q5
N-Channel NexFET™ Power MOSFETs 8-VSON-CLIP -55 to 150

N-Channel NexFET™ Power MOSFETs 8-VSON-CLIP -55 to 150

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD16322Q5 - 116746-CSD16322Q5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD16322Q5
116746-CSD16322Q5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD16322Q5 116746-CSD16322Q5
Manufacturer: Texas Instruments Win Source Part Number: 116746-CSD16322Q5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SON Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 21A (Ta), 97A (Tc) Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 9.7nC @ 4.5V Max Input Capacitance: 1365pF @ 12.5V Maximum Gate-Source Voltage: +10V, -8V Maximum Rds On at Id,Vgs: 5 mOhm @ 20A, 8V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: Texas Instruments
Win Source Part Number: 116746-CSD16322Q5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SON
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 21A (Ta), 97A (Tc)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 9.7nC @ 4.5V
Max Input Capacitance: 1365pF @ 12.5V
Maximum Gate-Source Voltage: +10V, -8V
Maximum Rds On at Id,Vgs: 5 mOhm @ 20A, 8V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 296-25112-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-25112-2-ND
Single FETs, MOSFETs 296-25112-2-ND
N-Channel 25V 21A (Ta), 97A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6)

N-Channel 25V 21A (Ta), 97A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6)

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Single FETs, MOSFETs - 296-25112-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-25112-6-ND
Single FETs, MOSFETs 296-25112-6-ND
N-Channel 25V 21A (Ta), 97A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6)

N-Channel 25V 21A (Ta), 97A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - 296-25112-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-25112-1-ND
Single FETs, MOSFETs 296-25112-1-ND
N-Channel 25V 21A (Ta), 97A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6)

N-Channel 25V 21A (Ta), 97A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6)

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Sheung Wan, Hong Kong
MOSFET N-Channel NexFET Pwr MOSFETs

MOSFET N-Channel NexFET Pwr MOSFETs

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Mosfet, N Ch, 25V, 97A, 8Son; Transistor Polarity Texas Instruments - 29AH3823 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 25V, 97A, 8Son; Transistor Polarity Texas Instruments
29AH3823
Mosfet, N Ch, 25V, 97A, 8Son; Transistor Polarity Texas Instruments 29AH3823
MOSFET, N CH, 25V, 97A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.1V; Power DissipationRoHS Compliant: Yes

MOSFET, N CH, 25V, 97A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.1V; Power DissipationRoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CSD16322Q5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CSD16322Q5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CSD16322Q5
MOSFET N-CH 25V 21A/97A 8VSON

MOSFET N-CH 25V 21A/97A 8VSON

Supplier's Site

Technical Specifications

  Texas Instruments Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number CSD16322Q5 116746-CSD16322Q5 296-25112-2-ND CSD16322Q5 29AH3823 CSD16322Q5
Product Name CSD16322Q5 N-Channel NexFET™ Power MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD16322Q5 Single FETs, MOSFETs MOSFET Mosfet, N Ch, 25V, 97A, 8Son; Transistor Polarity Texas Instruments Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 25 volts 25 volts
rDS(on) 0.0058 ohms 0.0039 ohms
IDSS 136000 milliamps 97000 milliamps
QG 6.8 nC
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