N-Channel NexFET™ Power MOSFETs 8-VSON-CLIP -55 to 150
N-Channel 25V 21A (Ta), 97A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6)
N-Channel 25V 21A (Ta), 97A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6)
N-Channel 25V 21A (Ta), 97A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6)
Manufacturer: Texas Instruments
Win Source Part Number: 116746-CSD16322Q5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SON
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 21A (Ta), 97A (Tc)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 9.7nC @ 4.5V
Max Input Capacitance: 1365pF @ 12.5V
Maximum Gate-Source Voltage: +10V, -8V
Maximum Rds On at Id,Vgs: 5 mOhm @ 20A, 8V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
25V, N ch NexFET MOSFET™, single SON5x6, 5.8mOhm 8-VSON-CLIP -55 to 150 Product overview: CSD16322Q5 from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 5.8mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 5.8mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD16322Q5 can be used for catalog matching and distributor lookup.
MOSFET N-Channel NexFET Pwr MOSFETs
MOSFET N-CH 25V 21A/97A 8VSON
MOSFET, N CH, 25V, 97A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.1V; Power DissipationRoHS Compliant: Yes
| Texas Instruments | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD16322Q5 | 296-25112-6-ND | 116746-CSD16322Q5 | 278-CSD16322Q5 | CSD16322Q5 | CSD16322Q5 | 29AH3823 |
| Product Name | CSD16322Q5 N-Channel NexFET™ Power MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD16322Q5 | 25V 5.8mOhm MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Ch, 25V, 97A, 8Son; Transistor Polarity Texas Instruments |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| V(BR)DSS | 25 volts | 25 volts | |||||
| rDS(on) | 0.0058 ohms | 0.0039 ohms | |||||
| IDSS | 136000 milliamps | 97000 milliamps | |||||
| QG | 6.8 nC |
