DIODES Incorporated Single FETs, MOSFETs DMT10H009LSSQ-13

The DMT10H009LSSQ-13 is a 100V N-channel enhancement mode MOSFET in an SO-8 package, designed for automotive applications requiring high-frequency switching, synchronous rectification, and DC-DC conversion. It features a maximum on-resistance of 9mΩ at VGS=10V and 13.8mΩ at VGS=4.5V, with a continuous drain current of 13A at TA=25°C and 10A at TC=25°C. The device is qualified to AEC-Q101, supported by PPAP, and manufactured in IATF 16949-certified facilities. It has a 100% UIS tested for robustness, operates from -55°C to +150°C, and is RoHS compliant with a thermal resistance of 50°C/W under recommended PCB layout. The package is molded plastic, rated UL 94V-0, and moisture sensitive level 1.