DIODES Incorporated 501V 650V MOSFET Transistor DMP65H9D0HSS-13

MOSFET BVDSS: 501V~650V SO-8 T&R Product overview: DMP65H9D0HSS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 501V, 650V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 501V, 650V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMP65H9D0HSS-13 can be used for catalog matching and distributor lookup.

MOSFET BVDSS: 501V~650V SO-8 T&R

MOSFET BVDSS: 501V~650V SO-8 T&R

MOSFET BVDSS: 501V~650V SO-8 T&R

Win Source Part Number: 1357327-DMP65H9D0HSS-13
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 36 pct.
REACH Status: REACH Unaffected
Mfr: Diodes Incorporated
Product Status: Active
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 9Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Power Dissipation (Max): 1.25W (Ta)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
ECCN: EAR99