DIODES Incorporated Single FETs, MOSFETs DMP21D1UTQ-13

Description
MOSFET BVDSS: 8V~24V SOT523 T&R
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Description
MOSFET BVDSS: 8V~24V SOT523 T&R
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Datasheet
Datasheet Summary
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The DMP21D1UTQ is a P-channel enhancement mode MOSFET for high-efficiency power management in DC-DC converters and load switches. It is packaged in an SOT523 case measuring 1.60 mm × 1.60 mm × 0.75 mm. The device has a -20 V drain-source voltage rating and continuous drain current of -0.63 A at VGS = -4.5 V. On-resistance is 710 mΩ at -4.5 V, 930 mΩ at -2.5 V, and 1250 mΩ at -1.8 V. Gate threshold voltage ranges from -0.5 V to -1.0 V. Input capacitance is 33 pF, and the gate is ESD protected. It is AEC-Q101 qualified, RoHS compliant, halogen and antimony free, and meets UL 94 V-0. Thermal resistance is 287 °C/W on a 1 in² copper pad and 480 °C/W on minimum pad layout. Operating temperature range is -55 °C to +150 °C.

Datasheet Summary
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The DMP21D1UTQ is a P-channel enhancement mode MOSFET for high-efficiency power management in DC-DC converters and load switches. It is packaged in an SOT523 case measuring 1.60 mm × 1.60 mm × 0.75 mm. The device has a -20 V drain-source voltage rating and continuous drain current of -0.63 A at VGS = -4.5 V. On-resistance is 710 mΩ at -4.5 V, 930 mΩ at -2.5 V, and 1250 mΩ at -1.8 V. Gate threshold voltage ranges from -0.5 V to -1.0 V. Input capacitance is 33 pF, and the gate is ESD protected. It is AEC-Q101 qualified, RoHS compliant, halogen and antimony free, and meets UL 94 V-0. Thermal resistance is 287 °C/W on a 1 in² copper pad and 480 °C/W on minimum pad layout. Operating temperature range is -55 °C to +150 °C.

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Single FETs, MOSFETs - 31-DMP21D1UTQ-13TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-DMP21D1UTQ-13TR-ND
Single FETs, MOSFETs 31-DMP21D1UTQ-13TR-ND
MOSFET BVDSS: 8V~24V SOT523 T&R

MOSFET BVDSS: 8V~24V SOT523 T&R

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 31-DMP21D1UTQ-13TR-ND
Product Name Single FETs, MOSFETs
Polarity P-Channel
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