DIODES Incorporated Single FETs, MOSFETs DMP2006UFG-7

Description
MOSFET P-CH 20V 17.5A POWERDI
Request a Quote Datasheet
Description
MOSFET P-CH 20V 17.5A POWERDI
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - DMP2006UFG-7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMP2006UFG-7
Single FETs, MOSFETs DMP2006UFG-7
MOSFET P-CH 20V 17.5A POWERDI

MOSFET P-CH 20V 17.5A POWERDI

Supplier's Site
Electronic Surplus - DMP2006UFG-7 - 759894-DMP2006UFG-7 - Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - DMP2006UFG-7
759894-DMP2006UFG-7
Electronic Surplus - DMP2006UFG-7 759894-DMP2006UFG-7
Manufacturer: Diodes Incorporated Win Source Part Number: 759894-DMP2006UFG-7 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-PowerVDFN Power Dissipation (Maximum): 2.3W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 20V Id - Continuous Drain Current: 17.5A, 40A Rds On (Maximum) at Id, Vgs: 5.2mOhm at 15A, 4.5V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 140nC at 10V Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 5404pF at 10V

Manufacturer: Diodes Incorporated
Win Source Part Number: 759894-DMP2006UFG-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerVDFN
Power Dissipation (Maximum): 2.3W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 17.5A, 40A
Rds On (Maximum) at Id, Vgs: 5.2mOhm at 15A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 140nC at 10V
Gate Source Voltage (Maximum): ±10V
Input Capacitance (Ciss) (Maximum) at Vds: 5404pF at 10V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMP2006UFG-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMP2006UFG-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMP2006UFG-7
MOSFET P-CH 20V 17.5A POWERDI

MOSFET P-CH 20V 17.5A POWERDI

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 20V P-Ch Enh Mode 10Vgss 5404pF 64nC

MOSFET 20V P-Ch Enh Mode 10Vgss 5404pF 64nC

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number DMP2006UFG-7 759894-DMP2006UFG-7 DMP2006UFG-7 DMP2006UFG-7
Product Name Single FETs, MOSFETs Electronic Surplus - DMP2006UFG-7 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel; P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 17500 milliamps
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