DIODES Incorporated 61V 100V TO220 MOSFET Transistor DMN68M7SCT

MOSFET BVDSS: 61V~100V TO220-3 T Product overview: DMN68M7SCT from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 61V, 100V, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 61V, 100V, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN68M7SCT can be used for catalog matching and distributor lookup.

Win Source Part Number: 1340942-DMN68M7SCT
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 68 V
Power Dissipation (Max): 125W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Base Product Number: DMN68
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 30 V

MOSFET BVDSS: 61V~100V TO220-3 T