DIODES Incorporated FET, MOSFET Arrays DMN66D0LDWQ-13

Dual N-channel enhancement mode MOSFET in SOT363 package, rated for 60V drain-source voltage and 217mA continuous drain current at 25°C, with on-resistance of 5Ω at VGS=10V and 6Ω at VGS=5V. Features ESD-protected gates, operates from -55°C to +150°C, and meets AEC-Q101 qualification with IATF 16949 manufacturing. Packaged in 10,000/tape-and-reel for automated assembly.