DIODES Incorporated FET, MOSFET Arrays DMN63D1LVQ-7

Description
MOSFET 2N-CH 60V 0.477A SOT563
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Description
MOSFET 2N-CH 60V 0.477A SOT563
Request a Quote
Datasheet
Datasheet Summary
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The DMN63D1LVQ-7 is a dual N-channel enhancement mode MOSFET in a SOT563 package, designed for automotive applications requiring AEC-Q101 qualification. It features a drain-source voltage rating of 60 V, a continuous drain current of 477 mA at 25°C, and a maximum on-resistance of 3.0 Ω at VGS = 5 V. The device has a thermal resistance of 283 °C/W on a standard FR-4 PCB and 133 °C/W on a 1-inch square copper plate. It is RoHS compliant, halogen- and antimony-free, and meets UL 94 V-0 flammability standards. The package is moisture-sensitive level 1 per J-STD-020, with matte tin finish on a copper leadframe. The part is supplied in a 3,000-reel packing format.

Datasheet Summary
Powered by GS/AI

The DMN63D1LVQ-7 is a dual N-channel enhancement mode MOSFET in a SOT563 package, designed for automotive applications requiring AEC-Q101 qualification. It features a drain-source voltage rating of 60 V, a continuous drain current of 477 mA at 25°C, and a maximum on-resistance of 3.0 Ω at VGS = 5 V. The device has a thermal resistance of 283 °C/W on a standard FR-4 PCB and 133 °C/W on a 1-inch square copper plate. It is RoHS compliant, halogen- and antimony-free, and meets UL 94 V-0 flammability standards. The package is moisture-sensitive level 1 per J-STD-020, with matte tin finish on a copper leadframe. The part is supplied in a 3,000-reel packing format.

Suppliers

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Product
Description
Supplier Links
FET, MOSFET Arrays - 31-DMN63D1LVQ-7TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN63D1LVQ-7TR-ND
FET, MOSFET Arrays 31-DMN63D1LVQ-7TR-ND
MOSFET 2N-CH 60V 0.477A SOT563

MOSFET 2N-CH 60V 0.477A SOT563

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 31-DMN63D1LVQ-7TR-ND
Product Name FET, MOSFET Arrays
Package Type SOT-563, SOT-666
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