DIODES Incorporated FET, MOSFET Arrays DMN62D2UDW-7

Dual N-channel MOSFET in SOT363 package designed for high-efficiency power management applications, with a 60V drain-source voltage rating, on-resistance of 2.5Ω at 2.5V gate-source voltage, and continuous drain current of 340mA at 25°C. Features low gate threshold voltage, fast switching speed, and ESD protection. Packaged in a surface-mount SOT363 with dimensions of 2.15mm × 2.10mm × 1.00mm, and meets AEC-Q100/101/104/200 qualification for automotive applications, with RoHS 3 compliance and UL 94 V-0 flammability rating. Thermal resistance is 260°C/W under recommended PCB layout.