DIODES Incorporated Single FETs, MOSFETs DMN62D1LFDQ-7

MOSFET N-CH 60V 400MA 3DFN T&R 3

MOSFET N-CH 60V 400MA 3DFN T&R 3

N-Channel 60V 400mA (Ta) 500mW Surface Mount U-DFN1212-3 (Type C)

MOSFET N-CH 60V 400MA 3DFN T&R 3 Product overview: DMN62D1LFDQ-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 400MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 400MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN62D1LFDQ-7 can be used for catalog matching and distributor lookup.

Win Source Part Number: 967192-DMN62D1LFDQ-7
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 500mW
Package / Case: 3-PowerUDFN
Supplier Device Package: U-DFN1212-3 (Type C)
Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): DMN62D1LFDQ-7DMN62D1LFDQ7;
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Diodes Incorporated
Base Product Number: DMN62
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V

MOSFET N-CH 60V 400MA 3DFN T&R 3