The MOSFET 39AH6601 is an N-channel enhancement mode device qualified to AEC-Q101 standards, making it suitable for high-reliability applications. It has a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) rating of 340mA at a gate-source voltage (VGS) of 4.5V. The on-resistance (RDS(ON)) is specified at a maximum of 2.0Oc under these conditions, which contributes to its efficiency in power management applications. This MOSFET features low input capacitance and fast switching speeds, enhancing its performance in motor control, power management functions, and backlighting applications. It is also designed with an ESD protected gate and is fully RoHS compliant, ensuring it meets environmental standards. The device is packaged in a SOT323 case, which is suitable for surface mount applications. Engineers considering this MOSFET for their projects will find it advantageous for applications requiring reliable performance and efficiency in power management.
MOSFET N-CH 60V 340MA SOT323
Manufacturer: Diodes Incorporated
Win Source Part Number: 801263-DMN62D0UW-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: SC-70, SOT-323
Power Dissipation (Maximum): 320mW
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 2Ohm at 100mA, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 0.5nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 32pF at 30V
Current - Continuous Drain (Id) at 25°C: 340mA
Vgs(th) (Maximum) at Id: 1V at 250μA
Maximum Vgs: ±20V
N-Channel 60V 340mA (Ta) 320mW (Ta) Surface Mount SOT-323
N-Channel 60V 340mA (Ta) 320mW (Ta) Surface Mount SOT-323
N-Channel 60V 340mA (Ta) 320mW (Ta) Surface Mount SOT-323
MOSFET N-CH 60V 340MA SOT323
MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
60V 340mA 2Ω@100mA,4.5V 320mW 1V@250uA null SOT-323-3 MOSFETs ROHS
MOSFET, AEC-Q101, N-CH, 0.34A, 60V; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:340mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN62D0UW-7 | 801263-DMN62D0UW-7 | DMN62D0UW-7DIDKR-ND | DMN62D0UW-7 | DMN62D0UW-7 | DMN62D0UW-7 | 39AH6601 |
| Product Name | Single FETs, MOSFETs | FETs - Single - DMN62D0UW-7 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, Aec-Q101, N-Ch, 0.34A, 60V; Channel Type Diodes Inc. |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| IDSS | 340 milliamps | 340 milliamps | |||||
| PD | 320 milliwatts | 320 milliwatts | 320 milliwatts |
