DIODES Incorporated FET, MOSFET Arrays DMN61D9UDWQ-13

The DMN61D9UDWQ is a dual N-channel enhancement mode MOSFET in an SOT363 package, designed for automotive applications requiring AEC-Q101 qualification and PPAP support. It features a 60 V drain-source voltage rating, with maximum continuous drain current of 318 mA at 25°C and on-resistance of 2.5 Ω at VGS = 2.5 V. The device has low gate threshold voltage, fast switching speed, and is ESD protected. It is manufactured in IATF 16949 certified facilities and certified as RoHS compliant and "Green" with halogen and antimony-free materials. The SOT363 case measures approximately 0.006 grams in weight and is moisture sensitive level 1 per J-STD-020. Thermal resistance is 285 °C/W when mounted on a 1 inch square copper plate, with a maximum power dissipation of 0.44 W under these conditions. Operating and storage temperature range is -55 to +150 °C.