DIODES Incorporated Single FETs, MOSFETs DMN60H160HSS-13

The DMN60H160HSS-13 is an N-channel enhancement mode MOSFET in an SO-8 package, designed for small-signal and level shift applications in power management, motor control, and DC-DC conversion. It features a 600 V drain-source breakdown voltage, a maximum continuous drain current of 63 mA at 25°C, and a static drain-source on-resistance of 160 Ω at VGS = 10 V and 190 Ω at VGS = 5 V. The device has a power dissipation of 1.25 W with a thermal resistance of 100 °C/W on a minimum pad layout, and operates from -55°C to +150°C. It is RoHS compliant, halogen- and antimony-free, and meets UL 94 V-0 flammability standards. The package is molded plastic with matte tin annealed terminations, and confirmed to be moisture sensitive level 1 per J-STD-020. The part qualifies for automotive applications per AEC-Q100/101/104/200 requirements.