DIODES Incorporated Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors DMN60H080DS-13

Description
Manufacturer: AMIS Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors Part Status: Obsolete FET Type: N-Channel Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3384 pF @ 30 V Power Dissipation (Max): 100W (Tc) Operating Temperature: -40°C ~ 85°C Mounting Type: Requires Holder
Request a Quote Datasheet
Description
Manufacturer: AMIS Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors Part Status: Obsolete FET Type: N-Channel Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3384 pF @ 30 V Power Dissipation (Max): 100W (Tc) Operating Temperature: -40°C ~ 85°C Mounting Type: Requires Holder
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors -  - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Manufacturer: AMIS Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors Part Status: Obsolete FET Type: N-Channel Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3384 pF @ 30 V Power Dissipation (Max): 100W (Tc) Operating Temperature: -40°C ~ 85°C Mounting Type: Requires Holder

Manufacturer: AMIS
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Part Status: Obsolete
FET Type: N-Channel
Drain to Source Voltage (Vdss): 50 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3384 pF @ 30 V
Power Dissipation (Max): 100W (Tc)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Requires Holder

Buy Now Datasheet
Single FETs, MOSFETs - 31-DMN60H080DS-13CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-DMN60H080DS-13CT-ND
Single FETs, MOSFETs 31-DMN60H080DS-13CT-ND
MOSFET N-CH 600V 80MA SOT23-3

MOSFET N-CH 600V 80MA SOT23-3

Buy Now Datasheet
Single FETs, MOSFETs - 31-DMN60H080DS-13TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-DMN60H080DS-13TR-ND
Single FETs, MOSFETs 31-DMN60H080DS-13TR-ND
N-Channel 600V 80mA (Ta) 1.1W (Ta) Surface Mount SOT-23-3

N-Channel 600V 80mA (Ta) 1.1W (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - 31-DMN60H080DS-13DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-DMN60H080DS-13DKR-ND
Single FETs, MOSFETs 31-DMN60H080DS-13DKR-ND
MOSFET N-CH 600V 80MA SOT23-3

MOSFET N-CH 600V 80MA SOT23-3

Buy Now Datasheet
Singapore
600V 80MA SOT23 MOSFET Transistor
278-DMN60H080DS-13
600V 80MA SOT23 MOSFET Transistor 278-DMN60H080DS-13
MOSFET N-CH 600V 80MA SOT23-3 Product overview: DMN60H080DS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 80MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 80MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN60H080DS-13 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 80MA SOT23-3 Product overview: DMN60H080DS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 80MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 80MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN60H080DS-13 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN60H080DS-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN60H080DS-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN60H080DS-13
MOSFET N-CH 600V 80MA SOT23-3

MOSFET N-CH 600V 80MA SOT23-3

Supplier's Site
Single FETs, MOSFETs - DMN60H080DS-13 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN60H080DS-13
Single FETs, MOSFETs DMN60H080DS-13
MOSFET N-CH 600V 80MA SOT23-3

MOSFET N-CH 600V 80MA SOT23-3

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFETBVDSS: 501V-650V

MOSFET MOSFETBVDSS: 501V-650V

Buy Now Datasheet
Mosfet, N-Ch, 600V, 0.07A, Sot-23 Rohs Compliant Diodes Inc. - 28AK8602 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 0.07A, Sot-23 Rohs Compliant Diodes Inc.
28AK8602
Mosfet, N-Ch, 600V, 0.07A, Sot-23 Rohs Compliant Diodes Inc. 28AK8602
MOSFET, N-CH, 600V, 0.07A, SOT-23 ROHS COMPLIANT: YES

MOSFET, N-CH, 600V, 0.07A, SOT-23 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 31-DMN60H080DS-13CT-ND 278-DMN60H080DS-13 DMN60H080DS-13 DMN60H080DS-13 DMN60H080DS-13 28AK8602
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors Single FETs, MOSFETs 600V 80MA SOT23 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 600V, 0.07A, Sot-23 Rohs Compliant Diodes Inc.
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
PD 100000 milliwatts 1.1 milliwatts 1100 milliwatts
Package Type SOT3 SOT23; TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount SOT23; TO-236-3, SC-59, SOT-23-3 TO-3; SOT23
MOSFET Operating Mode Enhancement
V(BR)DSS 600 volts 600 volts
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4 suppliers