Manufacturer: AMIS
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Part Status: Obsolete
FET Type: N-Channel
Drain to Source Voltage (Vdss): 50 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3384 pF @ 30 V
Power Dissipation (Max): 100W (Tc)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Requires Holder
MOSFET N-CH 600V 80MA SOT23-3
MOSFET N-CH 600V 80MA SOT23-3
N-Channel 600V 80mA (Ta) 1.1W (Ta) Surface Mount SOT-23-3
MOSFET N-CH 600V 80MA SOT23-3
MOSFET, N-CH, 600V, 0.07A, SOT-23 ROHS COMPLIANT: YES
MOSFET N-CH 600V 80MA SOT23-3
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMN60H080DS-13 | 31-DMN60H080DS-13CT-ND | 28AK8602 | DMN60H080DS-13 | DMN60H080DS-13 | |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 0.07A, Sot-23 Rohs Compliant Diodes Inc. | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 100000 milliwatts | 1100 milliwatts | ||||
| Package Type | SOT3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3; SOT23 | Surface Mount | |
| Transistor Technology / Material | MOSFET (Metal Oxide) |
