DIODES Incorporated Single FETs, MOSFETs DMN60H080DS-13

MOSFET N-CH 600V 80MA SOT23-3

N-Channel 600V 80mA (Ta) 1.1W (Ta) Surface Mount SOT-23-3

MOSFET N-CH 600V 80MA SOT23-3

Manufacturer: AMIS
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Part Status: Obsolete
FET Type: N-Channel
Drain to Source Voltage (Vdss): 50 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3384 pF @ 30 V
Power Dissipation (Max): 100W (Tc)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Requires Holder

MOSFET N-CH 600V 80MA SOT23-3 Product overview: DMN60H080DS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 80MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 80MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN60H080DS-13 can be used for catalog matching and distributor lookup.