DIODES Incorporated Single FETs, MOSFETs DMN6068SE-13

Description
N-Channel 60V 4.1A (Ta) 2W (Ta) Surface Mount SOT-223-3
Request a Quote Datasheet
Description
N-Channel 60V 4.1A (Ta) 2W (Ta) Surface Mount SOT-223-3
Request a Quote Datasheet

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Company
Product
Description
Supplier Links
Single FETs, MOSFETs - DMN6068SE-13DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN6068SE-13DKR-ND
Single FETs, MOSFETs DMN6068SE-13DKR-ND
N-Channel 60V 4.1A (Ta) 2W (Ta) Surface Mount SOT-223-3

N-Channel 60V 4.1A (Ta) 2W (Ta) Surface Mount SOT-223-3

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Single FETs, MOSFETs - DMN6068SE-13CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN6068SE-13CT-ND
Single FETs, MOSFETs DMN6068SE-13CT-ND
N-Channel 60V 4.1A (Ta) 2W (Ta) Surface Mount SOT-223-3

N-Channel 60V 4.1A (Ta) 2W (Ta) Surface Mount SOT-223-3

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Single FETs, MOSFETs - DMN6068SE-13TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN6068SE-13TR-ND
Single FETs, MOSFETs DMN6068SE-13TR-ND
N-Channel 60V 4.1A (Ta) 2W (Ta) Surface Mount SOT-223-3

N-Channel 60V 4.1A (Ta) 2W (Ta) Surface Mount SOT-223-3

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN6068SE-13 - 084065-DMN6068SE-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN6068SE-13
084065-DMN6068SE-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN6068SE-13 084065-DMN6068SE-13
Manufacturer: Diodes Incorporated Win Source Part Number: 084065-DMN6068SE-13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 4.1A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 10.3nC @ 10V Max Input Capacitance: 502pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 68 mOhm @ 12A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 084065-DMN6068SE-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4.1A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 10.3nC @ 10V
Max Input Capacitance: 502pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 68 mOhm @ 12A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
60V 4.1A MOSFET Transistor
278-DMN6068SE-13
60V 4.1A MOSFET Transistor 278-DMN6068SE-13
MOSFET N-CH 60V 4.1A SOT223 Product overview: DMN6068SE-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 4.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 4.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN6068SE-13 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 4.1A SOT223 Product overview: DMN6068SE-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 4.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 4.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN6068SE-13 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - DMN6068SE-13 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN6068SE-13
Single FETs, MOSFETs DMN6068SE-13
MOSFET N-CH 60V 4.1A SOT223

MOSFET N-CH 60V 4.1A SOT223

Supplier's Site Datasheet
Mosfet, N-Ch, 60V, 4.1A, Sot223; Transistor Polarity Diodes Inc. - 07AH3783 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 4.1A, Sot223; Transistor Polarity Diodes Inc.
07AH3783
Mosfet, N-Ch, 60V, 4.1A, Sot223; Transistor Polarity Diodes Inc. 07AH3783
MOSFET, N-CH, 60V, 4.1A, SOT223; Transistor Polarity:N Channel; Continuous Drain Current Id:4.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power DissipationRoHS Compliant: Yes

MOSFET, N-CH, 60V, 4.1A, SOT223; Transistor Polarity:N Channel; Continuous Drain Current Id:4.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power DissipationRoHS Compliant: Yes

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
DMN6068SE-13
Triode/MOS Tube/Transistor >> MOSFETs DMN6068SE-13
60V 4.1A 2W 68mΩ@10V,12A 3V@250uA N Channel SOT-223-3 MOSFETs ROHS

60V 4.1A 2W 68mΩ@10V,12A 3V@250uA N Channel SOT-223-3 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN6068SE-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN6068SE-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN6068SE-13
MOSFET N-CH 60V 4.1A SOT223

MOSFET N-CH 60V 4.1A SOT223

Supplier's Site
Sheung Wan, Hong Kong
MOSFET ENHANCE MODE MOSFET 60V N-CHAN

MOSFET ENHANCE MODE MOSFET 60V N-CHAN

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Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Newark, An Avnet Company LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number DMN6068SE-13DKR-ND 084065-DMN6068SE-13 278-DMN6068SE-13 DMN6068SE-13 07AH3783 DMN6068SE-13 DMN6068SE-13 DMN6068SE-13
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN6068SE-13 60V 4.1A MOSFET Transistor Single FETs, MOSFETs Mosfet, N-Ch, 60V, 4.1A, Sot223; Transistor Polarity Diodes Inc. Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Package Type SOT223; TO-261-4, TO-261AA SOT3; SOT-223 Tape & Reel (TR) SOT223; TO-261-4, TO-261AA TO-3 SOT223 TO-261-4, TO-261AA
V(BR)DSS 60 volts 60 volts 60 volts 60 volts
PD 2000 milliwatts 2 milliwatts 2000 milliwatts 2000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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